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Superconductive tunneling into NbN deposited near room temperature

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93670· OSTI ID:7045026
We have developed the ability to deposit niobium nitride thin films routinely having a superconducting transition temperature of 14 K by dc reactive magnetron sputtering onto substrates held near room temperature (T/sub s/ <90 /sup 0/C). This allows the use of conventional photoresist liftoff techniques for patterning. Pb-counterelectrode tunnel junctions formed on these films show excellent V-I characteristics, suitable for device applications and offering potential advantages over conventional Pb-alloy/Pb-alloy and Nb/Pb-alloy junctions. These high quality junctions are also suitable for tunneling investigations of superconductivity in the Nb-N system.
Research Organization:
Bell Laboratories, Murray Hill, New Jersey 07974
OSTI ID:
7045026
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:8; ISSN APPLA
Country of Publication:
United States
Language:
English