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Title: Insulator interface effects in sputter-deposited NbN/MgO/NbN (superconductor--insulator--superconductor) tunnel junctions

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.574517· OSTI ID:6448717

All refractory, NbN/MgO/NbN (superconductor--insulator--superconductor) tunnel junctions have been fabricated by in situ sputter deposition. The influence of MgO thickness (0.8--6.0 nm) deposited under different sputtering ambients at various deposition rates on current--voltage (I--V) characteristics of small-area (30 x 30 ..mu..m) tunnel junctions is studied. The NbN/MgO/NbN trilayer is deposited in situ by dc reactive magnetron (NbN), and rf magnetron (MgO) sputtering, followed by thermal evaporation of a protective Au cap. Subsequent photolithography, reactive ion etching, planarization, and top contact (Pb/Ag) deposition completes the junction structure. Normal resistance of the junctions with MgO deposited in Ar or Ar and N/sub 2/ mixture shows good exponential dependence on the MgO thickness indicating formation of a pin-hole-free uniform barrier layer. Further, a postdeposition in situ oxygen plasma treatment of the MgO layer increases the junction resistance sharply, and reduces the subgap leakage. A possible enrichment of the MgO layer stoichiometry by the oxygen plasma treatment is suggested. A sumgap as high as 5.7 mV is observed for such a junction.

Research Organization:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
OSTI ID:
6448717
Journal Information:
J. Vac. Sci. Technol., A; (United States), Vol. 5:4, Issue 4
Country of Publication:
United States
Language:
English