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Ar ion bombardment effects of NbN/Pb Josephson junctions with plasma oxidized barriers

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.331973· OSTI ID:7050050
Details of the relation between Ar ion bombardment effects on NbN surface and I-V characteristics of NbN/Pb junctions with plasma oxidized barriers have been studied. NbN base electrodes, which behave as a strong coupling superconductor (T/sub c/>15 K, 2..delta../kT/sub c/ = 4.2--4.3), were prepared onto substrates at 300 /sup 0/C by reactive dc magnetron sputtering. In the NbN/Pb junction fabrication, cathode self-bias voltage V/sub CSB/ during Ar sputter cleaning strongly influences the subgap leakage current value, which increases with V/sub CSB/. The V/sub CSB/ also influences normalized normal tunnel resistance AR/sub NN/. It is found, in reflection electron diffraction and x-ray photoelectron spectroscopy studies, that the Ar ion bombardment at V/sub CSB/> 200 V on a NbN surface produces an amorphous structure in the surface layer. It is also found that the thickness of amorphous layer increases with Ar ion energy. Based on the experimental results, low subgap leakage current junctions, where V/sub m/ exceeds 100 mV at 4.2 K, were fabricated under low energy plasma oxidation conditions, where V/sub m/ is the product of Josephson critical current and subgap resistance. Sputter cleaning and plasma oxidation conditions for obtaining high quality junctions are also discussed.
Research Organization:
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki 319-11, Japan
OSTI ID:
7050050
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:12; ISSN JAPIA
Country of Publication:
United States
Language:
English

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