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Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.95774· OSTI ID:5993658
Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K.
Research Organization:
Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
OSTI ID:
5993658
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:11; ISSN APPLA
Country of Publication:
United States
Language:
English