Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers

Journal Article · Thu Apr 15 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93214· OSTI ID:5658062

Jillie, D W; Kroger, H; Smith, L N; Cukauskas, E J; Nisenoff, M

Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN-..cap alpha..Si-Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S-I-S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.

• Research Organization: Sperry Research Center, Sudbury, Massachusetts 01776
• OSTI ID: 5658062
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMORPHOUS STATE
CORRELATIONS
DATA
DIGITAL CIRCUITS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
INFORMATION
INTEGRATED CIRCUITS
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MICROELECTRONIC CIRCUITS
NIOBIUM
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
POTENTIALS
RADIATIONS
REFLECTIVITY
SEMIMETALS
SILICON
SPUTTERING
SUPERCONDUCTING JUNCTIONS
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNNEL EFFECT
ULTRAVIOLET RADIATION
VISIBLE RADIATION