Niobium nitride Josephson tunnel junctions with oxidized amorphous silicon barriers

Journal Article · Sun Feb 15 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92308· OSTI ID:6611176

Shinoki, F; Shoji, A; Kosaka, S; Takada, S; Hayakawa, H

High-quality NbN/NbN Josephson tunnel junctions have been fabricated by rf sputtering. Tunneling barriers are formed by oxidizing amorphous silicon films produced with rf glow discharge deposition. For patterning the base and counter electrode, sputtered ZnO films are employed as a resist mask. The juncitons are found to have large gaps (2..delta../sub NbN/) =4.4 mV), to have low leakage current, and to be quite stable for storage and thermal cyclings.

• Research Organization: Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki, 305 Japan
• OSTI ID: 6611176
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMORPHOUS STATE
CHALCOGENIDES
CHEMICAL REACTIONS
DEPOSITION
ELECTRIC DISCHARGES
ELECTRODES
ELEMENTS
ENERGY GAP
FABRICATION
FILMS
GLOW DISCHARGES
JOSEPHSON JUNCTIONS
JUNCTIONS
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RF SYSTEMS
SEMIMETALS
SILICON
SPUTTERING
STABILITY
SUPERCONDUCTING JUNCTIONS
THERMAL CYCLING
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT
ZINC COMPOUNDS
ZINC OXIDES