Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers

Journal Article · Thu Mar 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94803· OSTI ID:5151717

Kroger, H; Jillie, D W; Smith, L N; Phaneuf, L E; Potter, C N; Shaw, D M; Cukauskas, E J; Nisenoff, M

High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrode. These junctions have excellent characteristics for device applications: values of V/sub m/ (the product of the critical current and the subgap resistance measured at 2 mV and 4.2 K) ranging between 35--48 mV, ideal threshold curves, a steep current rise at the gap voltage, and Josephson current densities from 100 to 1100 A/cm/sup 2/.

• Research Organization: Sperry Research Center, Sudbury, Massachusetts 01776
• OSTI ID: 5151717
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COATINGS
CRITICAL CURRENT
CURRENT DENSITY
CURRENTS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRODES
ELEMENTS
FABRICATION
GERMANIUM
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
PHYSICAL PROPERTIES
PNICTIDES
SUPERCONDUCTING DEVICES
SUPERCONDUCTING JUNCTIONS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT
VAPOR DEPOSITED COATINGS