Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

Journal Article · Wed Jun 15 04:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.356577· OSTI ID:7071792

McGregor, D S; Rojeski, R A; Knoll, G F ^[1]; Terry, Jr, F L; East, J ^[2]; Eisen, Y ^[3]

---

1. Department of Nuclear Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
3. Soreq Nuclear Research Center, Israel Atomic Energy Commission, Yavne 70600 (Israel)

The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

• OSTI ID: 7071792
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:12; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CAPTURE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC FIELDS
ELECTRON CAPTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
MEASURING INSTRUMENTS
PNICTIDES
RADIATION DETECTORS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES