Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

Journal Article · Wed Jun 15 00:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.356577· OSTI ID:7071792

McGregor, D S; Rojeski, R A; Knoll, G F ^[1]; Terry, Jr, F L; East, J ^[2]; Eisen, Y ^[3]

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1. Department of Nuclear Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
3. Soreq Nuclear Research Center, Israel Atomic Energy Commission, Yavne 70600 (Israel)

The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

• OSTI ID: 7071792
• Journal Information: Journal of Applied Physics; (United States), Vol. 75:12; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL DEFECTS
RADIATION DETECTORS
ELECTRON CAPTURE
ELECTRIC FIELDS
IMPURITIES
SCHOTTKY BARRIER DIODES
ARSENIC COMPOUNDS
ARSENIDES
CAPTURE
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
MEASURING INSTRUMENTS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
360606 - Other Materials- Physical Properties- (1992-)