Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature

Journal Article · Thu May 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118981· OSTI ID:496366

Chen, J W; Ebling, D G ^[1]; Geppert, R; Irsigler, R; Schmid, T; Rogalla, M; Ludwig, J; Runge, K ^[2]

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1. Freiburg Materials Research Center, Stefan-Meier-Str.21, 79104 Freiburg (Germany)
2. Department of Physics, Albert-Ludwigs-University, Hermann-Herder-Str.3, 79104 Freiburg (Germany)

We present the results of charge collection measurements on liquid encapsulated Czochralski grown semi-insulating GaAs devices for alpha particles. Experimental evidence is given which demonstrates a drastic enhancement of charge collection efficiency after prolonged illumination with 1.086 {mu}m below-gap light. The recovery of EL2 from metastable state to normal state can also be achieved by electric field at high bias voltage. The experimental result shows that the EL2 defect is practically the dominant trap for free charge carriers and together with other shallow defects responsible for the electric compensation in semi-insulating GaAs. The metastable transition of the EL2 defect is always simultaneously accompanied by the neutralization of a shallow acceptor. No change in the type of conductivity was found. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 496366
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA DETECTION
CHARGE COLLECTION
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
INFRARED RADIATION
RADIATION DETECTORS
RADIATION EFFECTS