Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs

Journal Article · Tue Jul 01 04:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337670· OSTI ID:5540801

Dobrilla, P; Blakemore, J S

Distributions of stress, dislocations, and the EL2 midgap defect have been optically mapped in semi-insulating GaAs wafers, from (100)-grown crystals created by the liquid-encapsulated Czochralski method. The evolution of EL2 along the growth axis indicates that assessment of this property through the majority of the crystal volume is often poorly represented by wafers from near the two end regions. A comparison of maps for stress, dislocation and EL2 patterns as all measured with a given wafer does not support hypotheses that EL2 is a direct consequence either of stress or of dislocations. Other mechanisms, such as segregation and melt dynamics, thus appear more likely to control the formation and distribution of EL2.

• Research Organization: Oregon Graduate Center, Beaverton, Oregon 97006
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5540801
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BREAKDOWN
CHARGE DISTRIBUTION
CHARGED-PARTICLE TRANSPORT
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CURRENT DENSITY
CURRENTS
CZOCHRALSKI METHOD
DISLOCATIONS
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRONIC STRUCTURE
ESTERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MAPPING
MATERIALS
MIM JUNCTIONS
MYLAR
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PETROCHEMICALS
PETROLEUM PRODUCTS
PHYSICAL PROPERTIES
PLASTICS
PNICTIDES
POLYESTERS
POLYMERS
RADIATION TRANSPORT
RESIDUAL STRESSES
SEMICONDUCTOR JUNCTIONS
SPACE CHARGE
STRESSES
SYNTHETIC MATERIALS
TUNNEL EFFECT