Influence of the compensation in semi-insulating GaAs on the particle detector performance
Conference
·
OSTI ID:541097
- Albert-Ludwigs-Univ., Freiburg (Germany). Faculty of Physics; and others
GaAs Schottky diodes made by commercial undoped semi-insulating (SI) material have been shown to work well as radiation detectors. This material offers high radiation resistance together with high charge carrier mobility, good signal-to-noise ratio and a good detection efficiency for minimum ionizing particles. To optimize the detector performance of Schottky diodes made on SI-GaAs, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied. A strong dependence of the CCE on the ionized state of the arsenic antisite defect As{sub Ga}{sup +} and the resistivity determined from the Norde plot was observed. Also the influence of the compensation on the Schottky barrier height and space charge density can be seen.
- OSTI ID:
- 541097
- Report Number(s):
- CONF-960450--; ISBN 0-7803-3179-6
- Country of Publication:
- United States
- Language:
- English
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