Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detectors
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. of Glasgow (United Kingdom). Dept. of Physics and Astronomy
- Vilnius Univ. (Lithuania)
Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several supplies, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed.
- OSTI ID:
- 624189
- Report Number(s):
- CONF-971147--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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