Investigation of the radiation damage of GaAs detectors by protons, pions, neutrons and photons

Conference · Sun Dec 01 04:00:00 EST 1996

OSTI ID:405516

Braunschweig, W; Chu, Z; Kubicki, T; Krais, R ^[1]

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1. I. Physikalisches Institut der RWTH Aachen (Germany); and others

Schottky diodes made of Si-GaAs have been irradiated with high doses/fluences of photons (mean energy 1 MeV), neutrons (1 MeV), pions (191 MeV) and protons (23 GeV). The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and charge collection efficiencies for minimum ionizing as well as a-particles incident on the detector. Whereas no effect is seen after irradiation with photons, considerable degradation occurs after the irradiation with the neutral and charged heavy particles. Si-GaAs material with low carbon content is less affected than material with higher carbon concentration.

• OSTI ID: 405516
• Report Number(s): CONF-951231--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
GALLIUM ARSENIDES
NEUTRONS
PERFORMANCE
PHOTONS
PIONS
PROTONS
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES