Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon

Journal Article · Sat Aug 15 00:00:00 EDT 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.46.4077· OSTI ID:7068549

Tan, Z ^[1]; Namavar, F ^[2]; Budnick, J I; Sanchez, F H; Fasihuddin, A ^[3]; Heald, S M ^[4]; Bouldin, C E; Woicik, J C ^[5]

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1. Brookhaven National Laboratory, Upton, New York 11973 (United States) Physics Department, University of Connecticut, Storrs, Connecticut 06269-3046 (United States)
2. Spire Corporation, Bedford, Massachusetts 01730-2396 (United States)
3. Physics Department, University of Connecticut, Storrs, Connecticut 06269-3046 (United States) Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3046 (United States)
4. Brookhaven National Laboratory, Upton, New York 11973 (United States)
5. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon have been studied with use of extended x-ray-absorption fine-structure, x-ray-diffraction, and Rutherford backscattering spectrometry. Si(100) wafers were implanted at elevated temperatures, typically 350 {degree}C, to doses ranging from 1{times}10{sup 16} to 1{times}10{sup 18} ions/cm{sup 2}. In the Co-implanted system, CoSi{sub 2} forms with doses as low as 1{times}10{sup 16} Co/cm{sup 2} and up to 3{times}10{sup 17} Co/cm{sup 2}, where the CoSi phase starts to form. At higher doses (8{times}10{sup 17} Co/cm{sup 2}), ordered CoSi and a CoSi-like short-range-ordered phase coexist. The silicide formation observed in the Ni-implanted system is similar to that in the cobalt-implanted system. In the case of iron implantation, Fe is coordinated with about eight Si atoms in the (1--3){times}10{sup 17} Fe/cm{sup 2} range as in the tetragonal FeSi{sub 2}. However, the FeSi{sub 2} phase forms only at around 5{times}10{sup 17} Fe/cm{sup 2}. At even higher doses, a substantial amount of iron is in disordered states in addition to the ordered FeSi phase. Upon annealing at 900 {degree}C, semiconducting {beta}-FeSi{sub 2} forms in all the Fe-implanted samples independent of the dose. Mechanisms for silicide formation in these ion-implanted systems are discussed with respect to crystal structure, diffusion, and implantation damage.

• DOE Contract Number: AS05-80ER10742; FG02-90ER45424; AC02-76CH00016
• OSTI ID: 7068549
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 46:7; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT IONS
CHEMICAL REACTION KINETICS
COBALT SILICIDES
CRYSTAL STRUCTURE
IRON IONS
IRON SILICIDES
NICKEL IONS
NICKEL SILICIDES
SILICON
ION IMPLANTATION
ANNEALING
DIFFUSION
RADIATION DOSES
RADIATION EFFECTS
CHARGED PARTICLES
COBALT COMPOUNDS
DOSES
ELEMENTS
HEAT TREATMENTS
IONS
IRON COMPOUNDS
KINETICS
NICKEL COMPOUNDS
REACTION KINETICS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication