Silicide formation in high-dose Fe-implanted silicon
- Brookhaven National Lab., Upton, NY (United States)
- Spire Corp., Bedford, MA (United States)
- Connecticut Univ., Storrs, CT (United States)
We have studied the silicide formation in Fe-implanted Si(100), with 1{times}10{sup 17}--1{times}10{sup 18} Fe/cm{sup 2}, using extended x-ray absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350{degree}C, no silicide was observed at doses below 3{times}10{sup 17} Fe/cm{sup 2}. At 5{times}10{sup 17}, both {alpha}-FeSi{sub 2} and {beta}-FeSi{sub 2} form but {alpha}-FeSi{sub 2} appears to be the majority phase. As the dose increases to 7{times}10{sup 17} and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe{sub 5}Si{sub 3} was also observed in the 1{times}10{sup 18} Fe/cm{sup 2} sample. Upon post-implantation annealing at 700{degree}C or 900{degree}C, single phase {beta}-FeSi{sub 2} was obtained independent of the dosage. 17 refs., 4 figs.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016; FG02-90ER45424; AS05-80ER10742
- OSTI ID:
- 10112849
- Report Number(s):
- BNL--46352; CONF-911202--23; ON: DE92005376
- Country of Publication:
- United States
- Language:
- English
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