Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001)
- Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- Instituto de Fisica, UFRGS, 91501 Porto Alegre (Brazil)
Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(001) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 {degree}C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of {gamma}-FeSi{sub 2}, {alpha}-FeSi{sub 2}, and {beta}-FeSi{sub 2} with increasing Fe concentration along the implantation profile. The critical concentrations for the {gamma}-{alpha} and {alpha}-{beta} phase transitions were determined as {approx}11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 249390
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
M{umlt o}ssbauer study of the magnetic character and ordering process of the cubic {gamma}-FeSi{sub 2} phase obtained by Fe implantation into a Si(100) matrix
Silicide formation in high-dose Fe-implanted silicon