Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior
- Instituto de Fisica, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970 Porto Alegre (Brazil)
- Centre de Spectrometrie et Spectrometrie de Masse, Bat 108, 91405 Orsay (France)
- Departamento de Fisica, Facultad de Ciencias Exactas, U.N.L.P., La Plata (Argentina)
- Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 9720 (United States)
The epitaxial growth of FeSi{sub 2} silicides was studied by using ion-beam epitaxial crystallization (IBIEC) of Fe-implanted Si(001) samples. By employing Rutherford backscattering/channeling spectrometry and transmission electron microscopy it was possible to determine that the IBIEC process produces a {gamma}-, {alpha}-, and {Beta}-FeSi{sub 2} phase sequence, with increasing Fe concentration along the implantation profile. The critical concentrations for {gamma}{implies}{alpha} and {alpha}{implies}{Beta} phase transitions are 11 and 21 at.{percent}, respectively. A study of the thermal behavior of these phases shows that the {gamma}- and {alpha}-FeSi{sub 2} are metastable with respect to the {Beta}-FeSi{sub 2} phase. The {gamma} to {Beta}-FeSi{sub 2} transition starts at 700{degree}C via an Ostwald ripening process. In addition a 800{degree}C, 1 h anneal of high Fe concentration samples produces a complete {alpha} and {gamma} to {Beta}-FeSi{sub 2} transformation. Finally, it is demonstrated that a regular or a rapid thermal annealing on Fe-implanted Si samples induces only the formation of a {Beta}-FeSi{sub 2} phase. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 253446
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 79; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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