Silicide Formation in High-Dose Fe-Implanted Silicon
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Spire Corporation, Bedford, MA (United States)
- University of Connecticut, Storrs, CT (United States)
We have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but 6h-FeSi2 appears to be the majority phase. As the dose increases to 71017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase β-FeSi2 was obtained independent of the dosage.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76CH00016; FG02-90ER45424; AS05-80ER10742
- OSTI ID:
- 5997501
- Report Number(s):
- BNL-46352; CONF-911202--23; ON: DE92005376
- Journal Information:
- Materials Research Society Symposia Proceedings, Journal Name: Materials Research Society Symposia Proceedings Vol. 235; ISSN 0272-9172
- Publisher:
- Springer Nature
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
ION IMPLANTATION
IONS
IRON IONS
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTRA
SYNTHESIS
X-RAY DIFFRACTION
X-RAY SPECTRA