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Silicide Formation in High-Dose Fe-Implanted Silicon

Conference · · Materials Research Society Symposia Proceedings
DOI:https://doi.org/10.1557/proc-235-267· OSTI ID:5997501
 [1];  [2];  [1];  [1];  [3]
  1. Brookhaven National Laboratory (BNL), Upton, NY (United States)
  2. Spire Corporation, Bedford, MA (United States)
  3. University of Connecticut, Storrs, CT (United States)

We have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but 6h-FeSi2 appears to be the majority phase. As the dose increases to 7­1017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase β-FeSi2 was obtained independent of the dosage.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76CH00016; FG02-90ER45424; AS05-80ER10742
OSTI ID:
5997501
Report Number(s):
BNL-46352; CONF-911202--23; ON: DE92005376
Journal Information:
Materials Research Society Symposia Proceedings, Journal Name: Materials Research Society Symposia Proceedings Vol. 235; ISSN 0272-9172
Publisher:
Springer Nature
Country of Publication:
United States
Language:
English

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