High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nm
Journal Article
·
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)
- Jet Propulsion Lab., Pasadena, CA (USA)
Ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers exhibiting record high quantum efficiencies and high output power densities (105 mW per facet from a 6 {mu}m wide stripe) at a lasing wavelength of 980 nm have been fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. Life testing at an output power of 30 mW per uncoated facet reveals a slow gradual degradation during the initial 500 h of operation after which the operating characteristics of the lasers become stable. The emission wavelength, the high output power, and the fundamental lateral model operation render these lasers suitable for pumping Er{sup 3 +}-doped fiber amplifiers.
- OSTI ID:
- 7066383
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:5; ISSN IPTLE; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
Similar Records
A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers
Proton-isolated narrow stripe visible laser grown by metalorganic chemical vapor deposition
Lasing characteristics of GaInAsP/InP narrow planar stripe lasers
Journal Article
·
Wed Aug 01 00:00:00 EDT 1990
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:6631640
Proton-isolated narrow stripe visible laser grown by metalorganic chemical vapor deposition
Journal Article
·
Sun Feb 14 23:00:00 EST 1982
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5813644
Lasing characteristics of GaInAsP/InP narrow planar stripe lasers
Journal Article
·
Tue Jul 01 00:00:00 EDT 1980
· J. Appl. Phys.; (United States)
·
OSTI ID:5294808
Related Subjects
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
ERBIUM ADDITIONS
ERBIUM ALLOYS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
PERFORMANCE TESTING
PNICTIDES
PULSE AMPLIFIERS
QUANTUM EFFICIENCY
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SERVICE LIFE
SOLID STATE LASERS
TESTING
WAVEGUIDES
426002* -- Engineering-- Lasers & Masers-- (1990-)
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
ERBIUM ADDITIONS
ERBIUM ALLOYS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
PERFORMANCE TESTING
PNICTIDES
PULSE AMPLIFIERS
QUANTUM EFFICIENCY
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SERVICE LIFE
SOLID STATE LASERS
TESTING
WAVEGUIDES