Proton-isolated narrow stripe visible laser grown by metalorganic chemical vapor deposition

Journal Article · Mon Feb 15 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93081· OSTI ID:5813644

Mori, Y; Sato, H; Ikeda, M; Matsuda, O; Kaneko, K; Watanabe, N

Lasing characteristics were investigated on the narrow stripe visible laser grown by metalorganic chemical vapor deposition. The shortest emission wavelength achieved was 715 nm in pulsed operation. While the pulsed threshold current was essentially independent of the stripe width, the threshold current under cw operation increased with decreasing stripe width. The light-output power linearly increased without kinks up to 17 mW per facet for 760-nm devices with less than a 5-..mu..m stripe. The differential quantum efficiency was as high as 70% and was independent both of the stripe width and of the emission wavelength. The beam pattern parallel to the junction plane was non-Gaussian with the full width at half-maximum power of 33/sup 0/. Beam aspect ratio was less than 1.2.

• Research Organization: Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
• OSTI ID: 5813644
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
BARYONS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONFIGURATION
CRYSTAL GROWTH
DEPOSITION
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
FERMIONS
HADRONS
LASERS
NUCLEONS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
POWER RANGE MILLI W
PROTONS
PULSES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
VISIBLE RADIATION
WAVELENGTHS