Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic-chemical vapor deposition

Journal Article · Fri Jan 15 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93007· OSTI ID:6019836

Burnham, R D; Scifres, D R; Streifer, W

Stripe geometry lasers grown by metalorganic-chemical vapor deposition lasing at 8260 A (approx.7% Al in the active region) are described. Pulsed current thresholds vary little with stripe width for 4-, 6-, and 8-..mu..m stripe widths. For 51 lasers that are 200 +- 10 ..mu..m long with 4-, 6-, or 8-..mu..m stripe widths, the average threshold currents were 40.4, 41.1, and 42 mA, respectively, and 37 of these lasers fall within +- 1 mA of these averages. External differential quantum efficiencies for these same lasers are 75, 67, and 63%.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6019836
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPOSITION
DIMENSIONS
EFFICIENCY
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GEOMETRY
HADRONS
LASERS
MATHEMATICS
NUCLEONS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
PROTONS
PULSES
QUANTITY RATIO
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THICKNESS