Operation characteristics of buried-stripe GaInAsP/InP DH lasers made by melt-back method

Journal Article · Sat Dec 01 00:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325969· OSTI ID:5762655

Kano, H; Sugiyama, K

A buried-stripe configuration of GaInAsP/InP dh laser was made by using a melt-back method combined with a chemical etching for obtaining a mesa-stripe geometry. The wavelength of laser emission was 1.3 ..mu..m at room temperature. The lowest threshold current of cw operation at room temperature was 30 mA with the 2-..mu..m-wide buried-stripe laser. External differential quantum efficiency was 24% per facet, and the laser power increased up to 40 mW (dc current of 230 mA) without any significant kink. As the buried-stripe laser had good thermal characteristics, cw operation was realized at 100 /sup 0/C in a laboratory atmosphere. When the buried-stripe laser was activated by a pulse current of 3 ns in width, no relaxation oscillation was observed in the pulse response of laser emission, which is considered to be preferable for high-speed modulation of the laser power.

• Research Organization: Musashino Electrical Communication Laboratory, N.T.T., Musashino, Tokyo 180, Japan
• OSTI ID: 5762655
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:12
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
PERFORMANCE
CONFIGURATION
CRYSTAL GROWTH
EFFICIENCY
ETCHING
GALLIUM ARSENIDES
GEOMETRY
INDIUM PHOSPHIDES
MEDIUM TEMPERATURE
MELTING
MODULATION
PULSES
RELAXATION
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MATHEMATICS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)