Operation characteristics of buried-stripe GaInAsP/InP DH lasers made by melt-back method

Journal Article · Sat Dec 01 04:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325969· OSTI ID:5762655

Kano, H; Sugiyama, K

A buried-stripe configuration of GaInAsP/InP dh laser was made by using a melt-back method combined with a chemical etching for obtaining a mesa-stripe geometry. The wavelength of laser emission was 1.3 ..mu..m at room temperature. The lowest threshold current of cw operation at room temperature was 30 mA with the 2-..mu..m-wide buried-stripe laser. External differential quantum efficiency was 24% per facet, and the laser power increased up to 40 mW (dc current of 230 mA) without any significant kink. As the buried-stripe laser had good thermal characteristics, cw operation was realized at 100 /sup 0/C in a laboratory atmosphere. When the buried-stripe laser was activated by a pulse current of 3 ns in width, no relaxation oscillation was observed in the pulse response of laser emission, which is considered to be preferable for high-speed modulation of the laser power.

• Research Organization: Musashino Electrical Communication Laboratory, N.T.T., Musashino, Tokyo 180, Japan
• OSTI ID: 5762655
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CRYSTAL GROWTH
EFFICIENCY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GEOMETRY
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MATHEMATICS
MEDIUM TEMPERATURE
MELTING
MODULATION
PERFORMANCE
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING