Lasing characteristics of GaInAsP/InP narrow planar stripe lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328192· OSTI ID:5294808

Oe, K; Ando, S; Sugiyama, K

The lasing characteristics of the GaInAsP/InP narrow planar stripe lasers which were prepared by using InP epilayers as Zn-diffusion masks in order to reduce the introduction of defects during the fabrication procedures were investigated. The narrow (< or =7 ..mu..m) stripe lasers showed good mode characteristics to operate in a fundamental-transverse mode up to the output power of more than 20 mW per facet and in a single longitudinal mode in the power region. The threshold current was found to increase significantly and shifts of the lasing output towards shorter wavelength occurred as the stripe width was reduced. Remarkably wide near-field patterns along the junction plane were obtained and far-field patterns were found to be characterized by twin peaks in the narrow stripe lasers.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino, Tokyo, 180, Japan
• OSTI ID: 5294808
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIFFUSION
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LAYERS
METALS
NUMERICAL DATA
OSCILLATION MODES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
WAVELENGTHS
ZINC