GaInAsP/InP planar stripe lasers prepared by using sputtered SiO/sub 2/ film as a Zn-diffusion mask

Journal Article · Tue Jan 01 04:00:00 EST 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327340· OSTI ID:5802042

Oe, K; Ando, S; Sugiyama, K

The dependence of lasing characteristics on stripe width in GaInAsP/InP double-heterostructure planar stripe lasers, prepared by using sputtered SiO/sub 2/ film as a Zn-diffusion mask, was investigated. The lasers of 10-, 15-, and 20-..mu..m-wide stripes operated in a fundamental-transverse mode with more than 20% differential quantum efficiencies per facet, while the 5-..mu..m-wide stripe lasers operated in a multi-transverse-mode even just above threshold. The threshold current of 5-..mu..m-wide stripe lasers increased greatly, and the lasing wavelengths shifted to shorter than those of stripe lasers with larger stripe widths. The 15-..mu..m-wide stripe lasers showed good mode characteristics to operate in a fundamental-transverse mode up to the output power of 22 mW per facet and in a single longitudinal mode over a wide range of currents. The cause of this dependence of lasing characteristics on stripe width was discussed, and it was assumed that the Zn diffusion into the stripe region using a sputtered SiO/sub 2/ mask is most responsible for the dependence.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telepone Public Corporation, Musashino, Tokyo, 180, Japan
• OSTI ID: 5802042
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DIFFUSION
EFFICIENCY
ELEMENTS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MATHEMATICAL MODELS
METALS
OSCILLATION MODES
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
WAVELENGTHS
ZINC