Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions

Journal Article · Tue May 25 00:00:00 EDT 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.4735· OSTI ID:7060

Jiang, H W; Kim, Yongmin; Lee, Kyu-Seok; Lee, X; Munteanu, F M; Perry, C H; Simmons, J A

Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al_0.3Ga_0.7As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields ({nu} >2), the photohuninescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor {nu} <1 and 1< {nu} <2, we found strong bound states due to Mott type Vocalizations. Since a SHJ has an open valence band structure, these bound states area unique property of the dynamic movement of the valence holes in strong magnetic fields.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7060
• Report Number(s): SAND99-1313J; ON: DE00007060
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
Heterojunctions
Bound State
Hall Effect
Gallium Arsenides
Aluminium Arsenides