Magnetic-field-induced charged exciton studies in a GaAs/Al{sub 0.3}Ga{sub 0.7}As single heterojunction
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
The magnetophotoluminescence (MPL) behavior of a GaAs/Al{sub 0.3}Ga{sub 0.7}As single heterojunction has been investigated to 60 T. We observed negatively charged singlet (X{sub s}{sup -}) and triplet (X{sub t}{sup -}) exciton states that are formed at high magnetic fields beyond the {nu}=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for the X{sub s}{sup -} and X{sub t}{sup -} states showed variations (maxima and minima) at the {nu}=1/3 and 1/5 fractional quantum Hall states as a consequence of a large reduction of electron-hole screening at these filling factors. (c) 2000 The American Physical Society.
- OSTI ID:
- 20215498
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 61; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Crossing behavior of the singlet and triplet State of the negatively charged magneto-exciton in a GaAs/AlGaAs quantum well
Crossing behavior of the singlet and triplet state of the negatively charged magnetoexciton in a GaAs/Al{sub 0.55}Ga{sub 0.45}As quantum well