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Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Journal Article · · Physical Review Letters
OSTI ID:7061

The magnetophotoluminescence (MPL) behavior of a GaAs/Al0.3Ga0.7As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the {nu}=l quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the {nu}=l/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
7061
Report Number(s):
SAND99-1314J; ON: DE00007061
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters
Country of Publication:
United States
Language:
English

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