Magnetoluminescence oscillations of a doped (Al,Ga)As/GaAs single heterojunction
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- National High Magnetic Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Electronics and Telecommunications Research Institute, Taejon 305-600 (Korea)
We have studied the photoluminescence spectra of a modulation doped (Al,Ga)As/GaAs single heterojunction in magnetic fields to 50 T at 4 K. When an external excitation is introduced to the system, photocreated electrons push the Fermi energy close to the second subband and lead to the formation of a hybridized eigenstate of the second subband (E1) exciton and the first subband (E0) two-dimensional electron state. The conduction-band hybridization enhances nonlinear behavior of magnetoexciton transitions in the optical process. At low fields, the E1 magnetoexciton transition is dominant, because the E1 hole wave-function overlap is larger than that of E0 hole. Beyond the {nu}=2 quantum Hall state, where electron screening becomes negligible, electron-hole attraction is dominant, and holes tend to move to the interface. As a consequence, the photoluminescence oscillator strength switches from the magneto-exciton transition to the lowest-Landau-level subband transition above 13 T. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 295537
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 3 Vol. 59; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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