Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

Journal Article · Wed May 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95784· OSTI ID:6439146

Glembocki, O J; Shanabrook, B V; Bottka, N; Beard, W T; Comas, J

The optical modulation technique of photoreflectance (PR) has been applied to characterize the interband transitions in GaAs/AlGaAs multiple quantum wells (MQW) and modulation-doped heterojunctions at room temperature. The spectra of the MQW show derivative-like reflectance features due to allowed interband transitions from heavy and light hole subbands to conduction subbands, and the E0(Gamma/8,v/ to Gamma/6,c/) transitions of the AlGaAs layers. The data are consistent with a square well calculation using a conduction-band offset of 60 percent of the band-gap discontinuity. For modulation-doped heterojunctions, a correlation is observed between a PR feature approximately 18 meV above the GaAs fundamental gap and the presence of a two-dimensional electron gas. 14 references.

• Research Organization: Naval Research Lab., Washington, DC
• OSTI ID: 6439146
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC STRUCTURE
ELEMENTARY PARTICLES
ENERGY SPECTRA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAS LASERS
HELIUM-NEON LASERS
HETEROJUNCTIONS
JUNCTIONS
LASERS
MASSLESS PARTICLES
MODULATION
OPTICAL PROPERTIES
PHOTONS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR JUNCTIONS
SPECTRA
SURFACE PROPERTIES