Single longitudinal mode semiconductor laser

Patent · Tue Nov 11 04:00:00 EST 1986

OSTI ID:7059469

Mito, I

This patent describes a semiconductor laser diode comprising: a substrate; an optical waveguide, sandwiched between first and second cladding regions and formed over a first portion of the substrate, for feeding back radiation propagating there-through. The optical waveguide has a corrugated region extending within the optical waveguide in a direction parallel to the surface of the substrate. The thickness of the corrugated region varies in a prescribed period and the refractive index of the corrugated region differs from that of the optical waveguide; an optically active layer defined by opposite flat boundaries, butt-jointed to the optical waveguide and formed over a second portion of the substrate, for emitting radiation when a current is injected into it; and a pair of electrodes for supplying and injection current to the optically active layer.

• Assignee: NEC, Tokyo
• Patent Number(s): US 4622674
• OSTI ID: 7059469
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DESIGN
DIMENSIONS
ELECTRIC CURRENTS
ELECTRODES
ELECTROMAGNETIC RADIATION
LASER RADIATION
LAYERS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
THICKNESS
WAVEGUIDES