Distributed-feedback semiconductor laser
Patent
·
OSTI ID:5569702
A distributed-feedback (DFB) semiconductor laser diode is described comprising: an active layer emitting light upon the injection of an electric current; an optical waveguide, for guiding the light together with the active layer. A first cladding layer of the first conductivity type and a second cladding layer of a second conductivity type, first and second electrodes for injecting an electric current into the active layer; wherein a PN junction is formed in the active layer and the light emitted from the active layer, when the PN junction is forward biased, interacts, with the diffraction grating formed by the boundary of the corrugation pattern and caused the diode to lase.
- Assignee:
- NEC Corp., Tokyo
- Patent Number(s):
- US 4704720
- OSTI ID:
- 5569702
- Country of Publication:
- United States
- Language:
- English
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