Angled stripe superluminescent diode
This patent describes a superluminescent light-emitting diode device having high power output and high spectral bandwidth. The device comprising: a semiconductor structure including at least one channel region formed in a semiconductor substrate and filled with a first semiconductor cladding layer of material having a higher index of refraction than substrate material outside the channel region, to provide lateral index-guiding of light within the channel region. The semiconductor structure also including a second semiconductor cladding layer of opposite conductivity type to the first, an active semiconductor layer at a junction between the first and second semiconductor cladding layers, and at least one emitting facet formed at a channel end; means for applying an electrical forward-bias voltage across the junction to produce emission of light; and wherein the channel is slightly inclined to a direction normal to the facet, to suppress lasing within the device, which can then operated at high powers and a broad spectral width.
- Assignee:
- TRW Inc., Redondo Beach, CA
- Patent Number(s):
- US 4856014
- Application Number:
- PPN: US 6948177A
- OSTI ID:
- 5357541
- Country of Publication:
- United States
- Language:
- English
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