High-power superluminescent diodes

Journal Article · Wed Nov 30 23:00:00 EST 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.14376· OSTI ID:6587727

Alphonse, G A; Gilbert, D B; Harvey, M G; Ettenberg, M ^[1]

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1. David Sarnoff Research Center, CN 5300, Princeton, NJ (US)

By inclining the active stripe of a planar AlGaAs double heterojunction structure by 5/sup 0/ with respect to the facets, the authors have eliminated reflection feedback and made high-power superluminescent diodes emitting 28 mW with less than 5 percent spectral modulation.

• OSTI ID: 6587727
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:12; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTION DIODES
JUNCTIONS
LUMINESCENCE
LUMINESCENT CONCENTRATORS
MODULATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SOLAR CONCENTRATORS
SOLAR EQUIPMENT