High-power superluminescent diodes with non-injection output sections

Journal Article · Wed Mar 31 04:00:00 EST 2004 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2004V034N03ABEH002613· OSTI ID:21470491

Lobintsov, P A; Mamedov, D S; Prokhorov, Vyacheslav V; Semenov, A T ^[1]; Yakubovich, S D ^[2]

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1. Superlum Diodes Ltd., Moscow (Russian Federation)
2. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)

Superluminescent diodes based on a separate-confinement (GaAl)As heterostructure are studied in the 850-nm spectral region. A contact p{sup +}-GaAs layer in the output sections of a narrow active channel of width 4 {mu}m was removed and a metal contact was not deposited. These sections played the role of saturable absorbers. This design provided a significant increase in the catastrophic optical damage threshold and ensured 250 mW of output cw power at the diode facet. The power coupled out through a single-mode fibre in the case of a simplest coupling achieved 110 mW. (lasers)

• OSTI ID: 21470491
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 3 Vol. 34; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
DAMAGE
DIODE TUBES
ELECTRON TUBES
ELEMENTS
EMISSION
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
LUMINESCENCE
METALS
OPTICAL FIBERS
PHOTON EMISSION
PNICTIDES
SPECTRA