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Quantum-dot superluminescent diodes with improved performance

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ;  [1];  [2]
  1. Superlum Diodes Ltd., Moscow (Russian Federation)
  2. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)

It is shown that optimisation of the structure of the active channel of quantum-dot InAs/AlGaAs/GaAs superluminescent diodes (SLDs) provides a noticeable increase in their external quantum efficiency. The output cw power coupled out of a single-mode fibre achieves 1.3 and 0.9 W for the emission bandwidth of 27 and 110 nm, respectively. The results of preliminary lifetime tests predict the high enough reliability of these SLDs. (lasers)

OSTI ID:
21466643
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 4 Vol. 37; ISSN 1063-7818
Country of Publication:
United States
Language:
English