Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100-1230-nm spectral range
- Superlum Diodes Ltd., Moscow (Russian Federation)
- A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)
- Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)
Superluminescent diodes (SLDs) based on a multilayer InAs/AlGaAs quantum dot heterostructure are studied. It is shown that the emission spectra of SLDs strongly depend on the active-channel length and injection current. In particular, the conditions are determined under which the emission spectrum covers the spectral range between 1100 and 1230 nm due to the levelling of the intensities of quantum transitions from the first and second excited states. Commercial SLDs emitting in this spectral range are not available at present. The SLD design provides cw operation and efficient coupling with a single-mode fibre. The output power achieves 1 mW in free space and 0.5 mW when coupled out through a fibre. Preliminary resource tests have demonstrated a rather high reliability of the developed SLDs. (lasers)
- OSTI ID:
- 21466540
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 6 Vol. 36; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAM CURRENTS
COUPLING
CURRENTS
DESIGN
DIODE TUBES
ELECTRON TUBES
EMISSION
EMISSION SPECTRA
ENERGY LEVELS
EXCITED STATES
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LAYERS
LUMINESCENCE
NANOSTRUCTURES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
QUANTUM DOTS
RELIABILITY
SPECTRA