Superbroadband high-power superluminescent diode emitting at 920 nm
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Superlum Ltd., Moscow (Russian Federation)
- Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)
The physical parameters of superluminescent diodes (SLDs) based on a single-layer quantum-well heterostructure with the (InGa)As active layer and a graded-index waveguide are studied. The power at the output of a single-mode fibre aligned with respect to the diode was 1 - 10 mW in the regime of spatially homogeneous injection depending on the length of the SLD active channel. The width of the emission spectrum was 100 - 110 nm, corresponding to the coherence length 7.6 - 8.8 {mu}m. (letters)
- OSTI ID:
- 21470329
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 6 Vol. 33; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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