High-power broadband superluminescent diodes emitting in the 1000-1100-nm spectral range

Journal Article · Sun Apr 30 00:00:00 EDT 2006 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2006V036N04ABEH013142· OSTI ID:21456872

Lapin, P I; Mamedov, D S ^[1]; Marmalyuk, Aleksandr A; Padalitsa, A A ^[2]; Yakubovich, S D ^[3]

---

1. Superlum Diodes Ltd., Moscow (Russian Federation)
2. 'Sigma Plus' Limited Liability Company, Moscow (Russian Federation)
3. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)

The physical parameters of superluminescent diodes (SLDs) based on a quantum-well heterostructure with two active (InGa)As layers are studied. The optical power coupled into a single-mode fibre was 0.5-30 mW and the width of the emission spectrum was 30-120 nm depending on the SLD active-channel length. The use of such SLDs in BroadLighter combined broadband radiation sources will provide emission covering the near-IR region between 800 and 1100 nm. (lasers and amplifiers)

• OSTI ID: 21456872
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 36, Issue 4; Other Information: DOI: 10.1070/QE2006v036n04ABEH013142; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EMISSION SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
LINE WIDTHS
LUMINESCENCE
NEAR INFRARED RADIATION
OPTICAL FIBERS
QUANTUM WELLS
RADIATION SOURCES
SEMICONDUCTOR DIODES
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
EMISSION
FIBERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFRARED RADIATION
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SPECTRA