High-power broadband superluminescent diodes emitting in the 1000-1100-nm spectral range

Journal Article · Sun Apr 30 00:00:00 EDT 2006 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2006V036N04ABEH013142· OSTI ID:21456872

Lapin, P I; Mamedov, D S ^[1]; Marmalyuk, Aleksandr A; Padalitsa, A A ^[2]; Yakubovich, S D ^[3]

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1. Superlum Diodes Ltd., Moscow (Russian Federation)
2. 'Sigma Plus' Limited Liability Company, Moscow (Russian Federation)
3. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)

The physical parameters of superluminescent diodes (SLDs) based on a quantum-well heterostructure with two active (InGa)As layers are studied. The optical power coupled into a single-mode fibre was 0.5-30 mW and the width of the emission spectrum was 30-120 nm depending on the SLD active-channel length. The use of such SLDs in BroadLighter combined broadband radiation sources will provide emission covering the near-IR region between 800 and 1100 nm. (lasers and amplifiers)

• OSTI ID: 21456872
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 4 Vol. 36; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
EMISSION
EMISSION SPECTRA
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
LINE WIDTHS
LUMINESCENCE
NANOSTRUCTURES
NEAR INFRARED RADIATION
OPTICAL FIBERS
PHOTON EMISSION
PNICTIDES
QUANTUM WELLS
RADIATION SOURCES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA