Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

Journal Article · Sat Nov 30 00:00:00 EST 2013 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2013V043N11ABEH015248· OSTI ID:22373691

Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V ^[1]; Ladugin, M A ^[2]; Marmalyuk, A A ^[3]; Yakubovich, S D ^[4]

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1. Superlum Diodes Ltd., Moscow (Russian Federation)
2. 'Sigm Plyus' Ltd, Moscow (Russian Federation)
3. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
4. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

• OSTI ID: 22373691
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 11; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
FIBERS
LASERS
NEAR INFRARED RADIATION
SEMICONDUCTOR MATERIALS
SIGNALS
TRAVELLING WAVES