Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm

Journal Article · Wed Aug 31 00:00:00 EDT 2011 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2011V041N08ABEH014652· OSTI ID:21552616

Il'chenko, S N; Kostin, Yu O; Kukushkin, I A; Ladugin, M A; Lapin, P I; Lobintsov, A A; Marmalyuk, Aleksandr A; Yakubovich, S D ^[1]

---

1. Superlum Ltd., Moscow (Russian Federation)

We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (Al{sub x}Ga{sub 1-x})As/GaAs single quantum well structure with an Al content x {approx} 0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable. (lasers)

• OSTI ID: 21552616
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 41, Issue 8; Other Information: DOI: 10.1070/QE2011v041n08ABEH014652; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMPLIFIERS
DIODE TUBES
GAIN
GALLIUM ARSENIDES
LAYERS
LENGTH
LEVEL WIDTHS
LUMINESCENCE
OPTICAL FIBERS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EMISSION
EQUIPMENT
FIBERS
GALLIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES