Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Superlum Diodes Ltd., Moscow (Russian Federation)
- Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)
It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm. (lasers)
- OSTI ID:
- 21470771
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 6 Vol. 35; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
Similar Records
Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm
Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm
High-power broadband superluminescent diodes emitting in the 1000-1100-nm spectral range
Journal Article
·
Mon Jun 30 00:00:00 EDT 2003
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21470328
Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm
Journal Article
·
Wed Aug 31 00:00:00 EDT 2011
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21552616
High-power broadband superluminescent diodes emitting in the 1000-1100-nm spectral range
Journal Article
·
Sun Apr 30 00:00:00 EDT 2006
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21456872