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Title: Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
;  [1];  [2]
  1. Superlum Diodes Ltd., Moscow (Russian Federation)
  2. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)

It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm. (lasers)

OSTI ID:
21470771
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 35, Issue 6; Other Information: DOI: 10.1070/QE2005v035n06ABEH004096; ISSN 1063-7818
Country of Publication:
United States
Language:
English