Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Superlum Diodes Ltd., Moscow (Russian Federation)
- Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)
It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm. (lasers)
- OSTI ID:
- 21470771
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 35, Issue 6; Other Information: DOI: 10.1070/QE2005v035n06ABEH004096; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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