skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Semiconductor optical amplifiers for the 1000-1100-nm spectral range

Abstract

Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

Authors:
;  [1];  [2]
  1. Superlum Diodes Ltd., Moscow (Russian Federation)
  2. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
21466862
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 38; Journal Issue: 7; Other Information: DOI: 10.1070/QE2008v038n07ABEH013824
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMPLIFIERS; GAIN; GALLIUM ARSENIDES; LASERS; LAYERS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TUNING; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES

Citation Formats

Lobintsov, A A, Shramenko, M V, and Yakubovich, S D. Semiconductor optical amplifiers for the 1000-1100-nm spectral range. United States: N. p., 2008. Web. doi:10.1070/QE2008V038N07ABEH013824.
Lobintsov, A A, Shramenko, M V, & Yakubovich, S D. Semiconductor optical amplifiers for the 1000-1100-nm spectral range. United States. doi:10.1070/QE2008V038N07ABEH013824.
Lobintsov, A A, Shramenko, M V, and Yakubovich, S D. Thu . "Semiconductor optical amplifiers for the 1000-1100-nm spectral range". United States. doi:10.1070/QE2008V038N07ABEH013824.
@article{osti_21466862,
title = {Semiconductor optical amplifiers for the 1000-1100-nm spectral range},
author = {Lobintsov, A A and Shramenko, M V and Yakubovich, S D},
abstractNote = {Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)},
doi = {10.1070/QE2008V038N07ABEH013824},
journal = {Quantum Electronics (Woodbury, N.Y.)},
number = 7,
volume = 38,
place = {United States},
year = {Thu Jul 31 00:00:00 EDT 2008},
month = {Thu Jul 31 00:00:00 EDT 2008}
}