Superluminescent LED source
Patent
·
OSTI ID:5022835
This patent describes a light source comprising a semiconductor laser comprising deposited semiconductor layers, an active region in the source and layers forming at least two quantum wells in the active region and a p-n junction is proximity to the active region. The layers immediately adjacent to the active region provide confinement for light generated in at least one optical cavity established in the active region and propagate between end facets of the source. Means to convert the semiconductor laser into a superluminescent LED source and means to broaden the wavelength spectral emission from the source by rendering the energy levels present in the quantum wells to be at different levels between or among the quantum wells thereby producing an output beam having high output intensity and a uniform far field pattern without intensity variation along the beam width are provided.
- Assignee:
- Xerox Corp., Stamford, CT
- Patent Number(s):
- US 4730331
- OSTI ID:
- 5022835
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
DEPOSITION
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
FABRICATION
JUNCTIONS
LASERS
LAYERS
LIGHT EMITTING DIODES
LIGHT SOURCES
LINE BROADENING
LUMINESCENCE
P-N JUNCTIONS
RADIATION SOURCES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTRA
VISIBLE RADIATION
WAVELENGTHS
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
DEPOSITION
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
FABRICATION
JUNCTIONS
LASERS
LAYERS
LIGHT EMITTING DIODES
LIGHT SOURCES
LINE BROADENING
LUMINESCENCE
P-N JUNCTIONS
RADIATION SOURCES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTRA
VISIBLE RADIATION
WAVELENGTHS