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U.S. Department of Energy
Office of Scientific and Technical Information

Hybrid gain/index guided semiconductor lasers and array lasers

Patent ·
OSTI ID:5887898

This patent describes a hybrid index/gain guided semiconductor laser comprising a plurality of contiguous semiconductor layers deposited on a substrate. One or more of the layers forms an active region having a lower bandgap and higher index of refraction relative to at least cladding layers immediately adjacent. The active region approximate to a p-n junction when, upon forward biasing via primary current confinement means, permitting carrier recombination in at least one portion and supporting radiation propagation under lasing conditions in an optical cavity established between transverse end facets of the laser beneath the primary current confinement means. The laser has at least two regions of current confinement means. The first of the regions containing the primary current confinement means and comprising a single current confinement stripe and extending from one laser facet toward the second of the regions. The second region has a pair of current confinement stripes parallel but axially offset relative to the axis of the primary current confinement stripe and extending from the other laser facet toward the first region. The axially offset current confinement stripes providing regions of lower refractive index in the laser compared to the region of the optical cavity established there and functioning as an index optical waveguide for the laser.

Assignee:
Xerox Corp., Stamford, CT
Patent Number(s):
US 4694459
OSTI ID:
5887898
Country of Publication:
United States
Language:
English