Clad superlattice semiconductor laser

Patent · Tue Mar 15 04:00:00 EST 1988

OSTI ID:5127180

Thornton, R L

In a clad superlattice semiconductor laser comprising planar semiconductor layers, one or more of the layers forming an active region for light wave generation and propagation under lasing conditions in a confined optical cavity which includes the active region, a cladding layer formed on opposite sides of the active region, a superlattice formed as part of at least one of the cladding layers and comprising alternating layers of wells and barriers, the improvement is described comprising a pair of spatially separated disordered regions formed in the superlattice along adjacent sides of the optical cavity via impurity induced disordering. The depth of the regions does not extending into the active region. The disordering of the regions provides the regions with a resultant lower refractive index compared to the refractive index of the optical cavity region to form a refractive index waveguide in the laser.

• Assignee: Xerox Corp., Stamford, CT
• Patent Number(s): US 4731789
• OSTI ID: 5127180
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CLADDING
DEPOSITION
DESIGN
LASER CAVITIES
LASER MATERIALS
LASERS
LAYERS
MATERIALS
OPTICAL PROPERTIES
OPTICAL SYSTEMS
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUPERLATTICES
SURFACE COATING
WAVEGUIDES