Semiconductor lasers fabricated from impurity induced disordering

Patent · Tue Feb 23 04:00:00 EST 1988

OSTI ID:5127137

Burnham, R D; Thornton, R L

In a semiconductor laser having semiconductor layers with at least one lasing element disposed in an optical cavity established therein, the layers including an active region for light wave generation and propagation under lasing conditions and cladding layers formed on the boundary surfaces of the active region, the improvement is described comprising at least one disorderable layer formed in or at the surface of one of the cladding layers an impurity induced into the disorderable layer laterally adjacent to either side of the optical cavity to cause a partial, vis a vis a complete, interdiffusion of elemental constituents of the disorderable layer with elemental constituents of at least one adjacent semiconductor layer to produce partially disordered alloy regions transversely of the disorderable layer having an average lower refractive index profile compared to the original refractive index profile present in the optical cavity thereby creative of an index waveguide for the optical cavity.

• Assignee: Xerox Corp., Stamford, CT
• Patent Number(s): US 4727556
• OSTI ID: 5127137
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ELECTROMAGNETIC RADIATION
FABRICATION
IMPURITIES
LASER CAVITIES
LASER MATERIALS
LASERS
LAYERS
MATERIALS
OPTICAL SYSTEMS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
VISIBLE RADIATION
WAVE PROPAGATION