Monolithic high density arrays of independently addressable offset semiconductor laser sources
Patent
·
OSTI ID:5482586
This patent describes an independently addressable semiconductor laser array for producing multiple beams. It comprises conductor layers with at least two lasing elements disposed spatially separated optical cavities, the lasing elements being offset in their sagittal directions a distance at least on the order of one half of their beam width. The layers including an active region for light wave generation and propagation under lasing conditions, an impurity induced into regions laterally adjacent to and between the spatially separated optical cavities and penetrating through the active region therein causing at least a partial interdiffusion of elemental constituents of the active region and at least one adjacent semiconductor layer to produce disordered alloy regions. The depth of the disordered regions sufficient to optically isolate the lasing elements so as not to be in phase locked condition, barrier means formed between the lasing elements and extending into the array a sufficient distance to electrically isolate the lasing elements and means to independently pump the lasing elements.
- Assignee:
- Xerox Corp., Stamford, CT (USA)
- Patent Number(s):
- US 4980893; A
- Application Number:
- PPN: US 7-485799
- OSTI ID:
- 5482586
- Country of Publication:
- United States
- Language:
- English
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