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Monolithic high density arrays of independently addressable semiconductor laser sources

Patent ·
OSTI ID:7149774
This patent describes an independently addressable semiconductor array. It comprises a plurality of semiconductor layers with at least two lasing elements disposed in spatially separated optical cavities. The layers including an active region for light wave generation and propagation under lasing conditions, an impurity induced into regions laterally adjacent to and between the spatially separated optical cavities and penetrating through the active region therein causing at least a partial interdiffusion of elemental constituents of the active region and at least on adjacent semiconductor layer to produce disordered alloy regions. The depth of the disordered regions sufficient to optically isolate the lasing elements so as not to be in phase locked condition. Barrier means to electrically isolate the lasing elements, means to independently pump the lasing elements, the combination of the disordered alloy regions and the barrier means providing for close proximity of the lasing elements with minimal electrical, optical and thermal crosstalk.
Assignee:
Xerox Corp., Stamford, CT
Patent Number(s):
US 4870652
Application Number:
PPN: US 7-216929A
OSTI ID:
7149774
Country of Publication:
United States
Language:
English