Combination index/gain guided semiconductor lasers
Patent
·
OSTI ID:5657325
A semiconductor laser is described comprising contiguous semiconductor layers deposited on a substrate, one or more of the layers forming an active region, the active region permitting carrier recombination and light generation in at least one portion thereof and supporting radiation propagating under lasing conditions in an optical cavity established between end facets of the laser. The active region is characterized by having in combination at least one index guiding region and at least one gain guiding region integrally coupled to one another relative within the optical cavity.
- Assignee:
- Xerox Corp., Stamford, CT
- Patent Number(s):
- US 4594718
- OSTI ID:
- 5657325
- Country of Publication:
- United States
- Language:
- English
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