Dual channel Fabry-Perot laser

Patent · Tue Mar 08 04:00:00 EST 1988

OSTI ID:5022828

Gordon, E I

A semiconductor diode laser is described comprising: a substrate, layers fabricated on the substrate, the layers including an active layer capable of emitting radiation when a pumping current is applied thereto, a first active waveguide defined in the active layer, a second active waveguide defined in the active layer, electrode means connected to the layers for applying the pumping current, a coupling region defined in the active layer between the first and second active waveguides so that the waveguides are optically coupled, and means for providing feedback for radiation emitted in the first or second active waveguides so that laser oscillations may be supported therein. The means provide a feedback path including a portion of the first active waveguide, the coupling region and a portion of the second active waveguide.

• Assignee: Lytel Inc., Somerville, NJ
• Patent Number(s): US 4730327
• OSTI ID: 5022828
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
ELECTRODES
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
FEEDBACK
LASER RADIATION
LASERS
LAYERS
OPTICAL PUMPING
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SUBSTRATES
WAVEGUIDES